P-channel MOSFET featuring 60V drain-source breakdown voltage and 80A continuous drain current. Offers low on-resistance of 23mΩ at a nominal gate-source voltage of -3V. Designed for through-hole mounting in a TO-220-3 package, this silicon metal-oxide semiconductor FET boasts a maximum power dissipation of 340W and operates across a wide temperature range from -55°C to 175°C. Fast switching characteristics include turn-on delay of 24ns and fall time of 30ns.
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Infineon SPP80P06P technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | -80A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | -60V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.033nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 340W |
| Mount | Through Hole |
| Nominal Vgs | -3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 340W |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | Through Hole |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 24ns |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
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