P-channel MOSFET featuring 60V drain-source breakdown voltage and 80A continuous drain current. Offers low on-resistance of 23mΩ at a nominal gate-source voltage of -3V. Designed for through-hole mounting in a TO-220-3 package, this silicon metal-oxide semiconductor FET boasts a maximum power dissipation of 340W and operates across a wide temperature range from -55°C to 175°C. Fast switching characteristics include turn-on delay of 24ns and fall time of 30ns.
PackageTO-220-3
Current Rating-80A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Infineon SPP80P06P technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Current Rating
-80A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
-60V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.033nF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
340W
Mount
Through Hole
Nominal Vgs
-3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
340W
Rds On Max
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Termination
Through Hole
Threshold Voltage
-3V
Turn-Off Delay Time
56ns
Turn-On Delay Time
24ns
DC Rated Voltage
-60V
Compliance
RoHS
Compliant
Datasheet
Infineon SPP80P06P Datasheet
Download the complete datasheet for Infineon SPP80P06P to view detailed technical specifications.
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