The SPS03N60C3 is a high-power N-channel MOSFET from Infineon, featuring a drain to source breakdown voltage of 650V and a continuous drain current of 3.2A. It has a drain to source resistance of 1.4 ohms and a gate to source voltage of 20V. The device is packaged in a TO-251-3 package and is suitable for high-power applications. The SPS03N60C3 operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
Sign in to ask questions about the Infineon SPS03N60C3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon SPS03N60C3 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.4R |
| Dual Supply Voltage | 650V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 400pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Nominal Vgs | 3V |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 64ns |
| Turn-On Delay Time | 7ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPS03N60C3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
