Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
Infineon SPU04N60C3XK technical specifications.
| Continuous Drain Current (ID) | 4.5A |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 58.5ns |
| Turn-On Delay Time | 6ns |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
