N-channel power MOSFET featuring 600V drain-source breakdown voltage and 15A continuous drain current. This single-element silicon FET offers a low 280mΩ drain-to-source resistance. Designed for high-power applications, it boasts a maximum power dissipation of 156W and operates within a temperature range of -55°C to 150°C. The component is housed in a TO-247-3 package and is RoHS and Lead-Free compliant.
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Infineon SPW15N60C3 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 15A |
| Current Rating | 15A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 1.66nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Number of Channels | 1 |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 156W |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | CoolMOS C3 |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 650V |
| Weight | 1.340411oz |
| Width | 5.21mm |
| RoHS | Compliant |
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