N-Channel Power MOSFET featuring 650V drain-source voltage and 24.3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 160mΩ and a maximum power dissipation of 240W. Designed for efficient switching, it exhibits a typical turn-on delay of 13ns and fall time of 14ns. Packaged in a TO-247-3 plastic housing, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 24.3A |
| Current Rating | 24.3A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Length | 16.03mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 240W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 650V |
| Width | 5.16mm |
| RoHS | Compliant |
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