N-channel silicon power MOSFET featuring 650V drain-to-source voltage and 47A continuous drain current. This Metal-oxide Semiconductor FET offers a low on-resistance of 70mΩ at a 47A current rating. Designed for high power applications, it boasts a maximum power dissipation of 415W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns fall time, 18ns turn-on delay, and 111ns turn-off delay. Packaged in a TO-247-3 plastic housing, this RoHS compliant component is suitable for demanding power conversion circuits.
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| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 47A |
| Current | 47A |
| Current Rating | 47A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.95mm |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 415W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 111ns |
| Turn-On Delay Time | 18ns |
| Voltage | 650V |
| DC Rated Voltage | 650V |
| Width | 5.3mm |
| RoHS | Compliant |
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