SPW47N60C3

N-channel silicon power MOSFET featuring 650V drain-to-source voltage and 47A continuous drain current. This Metal-oxide Semiconductor FET offers a low on-resistance of 70mΩ at a 47A current rating. Designed for high power applications, it boasts a maximum power dissipation of 415W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns fall time, 18ns turn-on delay, and 111ns turn-off delay. Packaged in a TO-247-3 plastic housing, this RoHS compliant component is suitable for demanding power conversion circuits.