N-Channel Power MOSFET featuring 600V drain-source voltage and 47A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 70mΩ Rds On resistance and 415W power dissipation. Designed for through-hole mounting in a TO-247 package, it boasts a fast 8ns fall time and 18ns turn-on delay. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is suitable for demanding power applications.
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| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 415W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 415W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 111ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
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