The SPW55N80C3FKSA1 is a high-power N-channel MOSFET from Infineon, featuring a drain-to-source breakdown voltage of 850V and a continuous drain current of 54.9A. It has a maximum power dissipation of 500W and operates within a temperature range of -55°C to 150°C. The device is packaged in a TO-247 flange mount and is lead-free and RoHS compliant.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Infineon SPW55N80C3FKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 54.9A |
| Drain to Source Breakdown Voltage | 850V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 7.52nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C3 |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPW55N80C3FKSA1 Datasheet
Download the complete datasheet for Infineon SPW55N80C3FKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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