N-channel RF MOSFET, single element, designed for surface mount applications. Features a 13V maximum drain-source voltage and 0.03A maximum continuous drain current. Operates up to 1000MHz with a maximum power dissipation of 200mW. Housed in a compact SOT-143R package with 4 pins (3+tab), measuring 2.9mm x 1.3mm x 1mm. Offers a typical power gain of 28dB and operates across a wide temperature range of -55°C to 150°C.
Infineon ST194E6716 technical specifications.
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