DDR DRAM memory IC with 67,108,864 words and a 64M x 16 configuration. Features a maximum access time of 0.45ns and a maximum clock frequency of 333MHz. Operates with a nominal supply voltage of 1.8V, ranging from 1.7V to 1.9V. This CMOS component is housed in an 84-terminal TWBGA package with an industrial temperature grade, supporting operation from -40°C to 85°C.
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Technical Specifications
Integrated Silicon Solution IS43DR16640C-3DBLI technical specifications.
General
Max Operating Temperature
85
Number of Terminals
84
Min Operating Temperature
-40
Terminal Position
BOTTOM
JEDEC Package Code
R-PBGA-B84
Width
8
Length
12.5
Number of Functions
1
Temperature Grade
INDUSTRIAL
Supply Voltage-Nom (Vsup)
1.8
Supply Voltage-Max (Vsup)
1.9
Supply Voltage-Min (Vsup)
1.7
Supply Current-Max
0.27
Number of Words
67108864
Number of Words Code
64000000
Memory IC Type
DDR DRAM
Number of Ports
1
Standby Current-Max
0.025
Access Time-Max
0.45
Clock Frequency-Max (fCLK)
333
I/O Type
COMMON
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Integrated Silicon Solution IS43DR16640C-3DBLI Datasheet
Download the complete datasheet for Integrated Silicon Solution IS43DR16640C-3DBLI to view detailed technical specifications.
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