DDR DRAM memory IC with 67,108,864 words and a 64M x 16 configuration. Features a maximum access time of 0.45ns and a maximum clock frequency of 333MHz. Operates with a nominal supply voltage of 1.8V, ranging from 1.7V to 1.9V. This CMOS component is housed in an 84-terminal TWBGA package with an industrial temperature grade, supporting operation from -40°C to 85°C.
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Technical Specifications
Integrated Silicon Solution IS43DR16640C-3DBLI technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 84 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B84 |
| Width | 8 |
| Length | 12.5 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Supply Current-Max | 0.27 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.025 |
| Access Time-Max | 0.45 |
| Clock Frequency-Max (fCLK) | 333 |
| I/O Type | COMMON |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Integrated Silicon Solution IS43DR16640C-3DBLI Datasheet
Download the complete datasheet for Integrated Silicon Solution IS43DR16640C-3DBLI to view detailed technical specifications.
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