Automotive-grade DDR SDRAM memory chip offering 512Mbit density with a 16Mx32 organization and 32-bit data bus width. Features a maximum clock rate of 166 MHz, 4 internal banks, and a maximum access time of 5.5 ns. Packaged in a 90-pin TFBGA (Thin Fine Pitch Ball Grid Array) with surface mount capability, measuring 13mm x 8mm x 0.8mm. Operates from a 1.8V supply voltage with a temperature range of -40°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Integrated Silicon Solution IS46LR32160B-6BLA1 technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 90 |
| PCB | 90 |
| Package Length (mm) | 13 |
| Package Width (mm) | 8 |
| Package Height (mm) | 0.8(Max) |
| Seated Plane Height (mm) | 1.2(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 512Mbit |
| Type | DDR SDRAM |
| Organization | 16Mx32 |
| Data Bus Width | 32bit |
| Maximum Clock Rate | 166MHz |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Maximum Access Time | 8|5.5ns |
| Density in Bits | 536870912bit |
| Address Bus Width | 15bit |
| Maximum Operating Current | 110mA |
| Typical Operating Supply Voltage | 1.8V |
| Max Operating Supply Voltage | 1.95V |
| Min Operating Supply Voltage | 1.7V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | 1J9V2 |
| EU RoHS | Yes |
| HTS Code | 8542320028 |
| Schedule B | 8542320015 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| PPAP | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Integrated Silicon Solution IS46LR32160B-6BLA1 Datasheet
Download the complete datasheet for Integrated Silicon Solution IS46LR32160B-6BLA1 to view detailed technical specifications.
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