Automotive-grade DDR SDRAM memory chip offering 512Mbit density with a 16Mx32 organization and 32-bit data bus width. Features a maximum clock rate of 166 MHz, 4 internal banks, and a maximum access time of 5.5 ns. Packaged in a 90-pin TFBGA (Thin Fine Pitch Ball Grid Array) with surface mount capability, measuring 13mm x 8mm x 0.8mm. Operates from a 1.8V supply voltage with a temperature range of -40°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Integrated Silicon Solution IS46LR32160B-6BLA1 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
90
PCB
90
Package Length (mm)
13
Package Width (mm)
8
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
1.2(Max)
Package Material
Plastic
Mounting
Surface Mount
Density
512Mbit
Type
DDR SDRAM
Organization
16Mx32
Data Bus Width
32bit
Maximum Clock Rate
166MHz
Number of Internal Banks
4
Number of Words per Bank
4M
Maximum Access Time
8|5.5ns
Density in Bits
536870912bit
Address Bus Width
15bit
Maximum Operating Current
110mA
Typical Operating Supply Voltage
1.8V
Max Operating Supply Voltage
1.95V
Min Operating Supply Voltage
1.7V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
1J9V2
EU RoHS
Yes
HTS Code
8542320028
Schedule B
8542320015
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
PPAP
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Integrated Silicon Solution IS46LR32160B-6BLA1 Datasheet
Download the complete datasheet for Integrated Silicon Solution IS46LR32160B-6BLA1 to view detailed technical specifications.
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