INTEGRATED SILICON SOLUTION

IS46LR32160B-75BLA2

Datasheet

DRAM 512Mbit 16Mx32 DDR SDRAM 133MHz 1.8V 90-Pin TFBGA

Integrated Silicon Solution

IS46LR32160B-75BLA2

Name: IS46LR32160B-75BLA2 Integrated Silicon Solution
Brand: Integrated Silicon Solution
SKU: IS46LR32160B-75BLA2

DRAM 512Mbit 16Mx32 DDR SDRAM 133MHz 1.8V 90-Pin TFBGA

Automotive-grade 512Mbit DDR SDRAM memory chip, organized as 16Mx32, featuring a 32-bit data bus and a maximum clock rate of 133 MHz. This surface-mount component utilizes a 90-pin TFBGA package with dimensions of 13mm x 8mm x 0.8mm (Max), operating at a typical 1.8V supply voltage. It offers 4 internal banks, each with 4M words, and a maximum access time of 6ns, suitable for demanding automotive applications with an operating temperature range of -40°C to 105°C.

PackageTFBGA

MountingSurface Mount

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Technical Specifications

Integrated Silicon Solution IS46LR32160B-75BLA2 technical specifications.

General

Basic Package Type	Ball Grid Array
Package Family Name	BGA
Package/Case	TFBGA
Package Description	Thin Fine Pitch Ball Grid Array
Lead Shape	Ball
Pin Count	90
PCB	90
Package Length (mm)	13
Package Width (mm)	8
Package Height (mm)	0.8(Max)
Seated Plane Height (mm)	1.2(Max)
Package Material	Plastic
Mounting	Surface Mount
Density	512Mbit
Type	DDR SDRAM
Organization	16Mx32
Data Bus Width	32bit
Maximum Clock Rate	133MHz
Number of Internal Banks	4
Number of Words per Bank	4M
Maximum Access Time	8\|6ns
Density in Bits	536870912bit
Address Bus Width	15bit
Maximum Operating Current	110mA
Typical Operating Supply Voltage	1.8V
Max Operating Supply Voltage	1.95V
Min Operating Supply Voltage	1.7V
Min Operating Temperature	-40°C
Max Operating Temperature	105°C

Compliance

Cage Code	1J9V2
EU RoHS	Yes
HTS Code	8542320028
Schedule B	8542320015
ECCN	EAR99
Automotive	Yes
AEC Qualified	Yes
PPAP	Yes
Radiation Hardening	No
RoHS Versions	2011/65/EU, 2015/863

Datasheet

This datasheet cannot be embedded due to technical restrictions.

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