Integrated Silicon Solution
IS61QDB251236A-250M3L
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
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Technical Specifications
Integrated Silicon Solution IS61QDB251236A-250M3L technical specifications.
General
Max Operating Temperature
70
Number of Terminals
165
Min Operating Temperature
0
Terminal Position
BOTTOM
JEDEC Package Code
R-PBGA-B165
Width
15
Length
17
Pin Count
165
Number of Functions
1
Temperature Grade
COMMERCIAL
Supply Voltage-Nom (Vsup)
1.8
Supply Voltage-Max (Vsup)
1.89
Supply Voltage-Min (Vsup)
1.71
Supply Current-Max
1
Number of Words
524288
Number of Words Code
512000
Memory IC Type
QDR SRAM
Parallel/Serial
PARALLEL
Standby Current-Max
0.27
Access Time-Max
0.45
Clock Frequency-Max (fCLK)
250
I/O Type
SEPARATE
Compliance
RoHS
Yes
Eccn Code
3A991.B.2.A
Lead Free
Yes
HTS Code
8542.32.00.41
REACH
Compliant
Military Spec
False
Datasheet
Integrated Silicon Solution IS61QDB251236A-250M3L Datasheet
Download the complete datasheet for Integrated Silicon Solution IS61QDB251236A-250M3L to view detailed technical specifications.
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