Integrated Silicon Solution
IS61QDB44M18A-250B3L
QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-165
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Technical Specifications
Integrated Silicon Solution IS61QDB44M18A-250B3L technical specifications.
General
| Max Operating Temperature | 70 |
| Number of Terminals | 165 |
| Min Operating Temperature | 0 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B165 |
| Width | 13 |
| Length | 15 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.89 |
| Supply Voltage-Min (Vsup) | 1.71 |
| Supply Current-Max | 0.65 |
| Number of Words | 4194304 |
| Number of Words Code | 4000000 |
| Memory IC Type | QDR SRAM |
| Parallel/Serial | PARALLEL |
| Access Time-Max | 0.45 |
| Clock Frequency-Max (fCLK) | 250 |
| I/O Type | SEPARATE |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Integrated Silicon Solution IS61QDB44M18A-250B3L Datasheet
Download the complete datasheet for Integrated Silicon Solution IS61QDB44M18A-250B3L to view detailed technical specifications.
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