
4Mb Parallel SRAM IC, featuring 10ns access time and an 18-bit address bus. This asynchronous memory operates with a 16-bit word size, offering 256,000 words of storage. Packaged in a compact 48-pin TFBGA with dimensions of 8.1mm x 6.1mm x 0.9mm, it supports a supply voltage range of 2.4V to 3.6V and operates from -40°C to 85°C.
Issi IS61WV25616BLL-10BLI technical specifications.
| Access Time | 10ns |
| Access Time-Max | 10ns |
| Address Bus Width | 18b |
| Package/Case | TFBGA |
| Density | 4Mb |
| Height | 0.9mm |
| Interface | Parallel |
| Length | 8.1mm |
| Max Operating Temperature | 85°C |
| Memory Size | 4Mb |
| Memory Type | RAM, , SRAM - Asynchronous, SDR |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 3.6V |
| Min Supply Voltage | 2.4V |
| Number of Ports | 1 |
| Number of Words | 256000 |
| Package Quantity | 480 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 45mA |
| Sync/Async | Asynchronous |
| Width | 6.1mm |
| Word Size | 16b |
| RoHS | Compliant |
Download the complete datasheet for Issi IS61WV25616BLL-10BLI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
