High Electron Mobility Transistor (HEMT) with N-channel enhancement mode operation. Delivers 5W of RF power across a DC-6GHz frequency range with a 28V drain-source voltage rating. Features an 8-terminal SOIC package with dual terminal positions. Operates reliably within a temperature range of -40°C to 85°C, utilizing a single active element.
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Macom NPTB00004A technical specifications.
| Max Operating Temperature | 85 |
| Number of Terminals | 8 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
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