The JANSR2N3439UA is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 350V and a maximum DC collector current of 1A. It has a maximum power dissipation of 800mW and is fabricated from silicon material. The transistor is available in a surface mount package with a seated plane height of 5.71mm and a maximum package height of 1.9mm. The operating temperature range is from -65°C to 200°C.
Sign in to ask questions about the Microchip JANSR2N3439UA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microchip JANSR2N3439UA technical specifications.
| Package/Case | UA |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 3.93(Max) |
| Package Width (mm) | 5.72(Max) |
| Package Height (mm) | 1.9(Max) |
| Seated Plane Height (mm) | 5.71(Max) |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 450V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 350V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 800mW |
| Material | Si |
| Minimum DC Current Gain | 40@20mA@10V|30@2mA@10V|[email protected]@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | 60991 |
| EU RoHS | No |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 100 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Microchip JANSR2N3439UA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
