N-channel MOSFET transistor in a TO-92-3 package. Features 500V drain-to-source breakdown voltage and 200mA continuous drain current. Offers 13Ω drain-to-source resistance and 1W maximum power dissipation. Operates across a -55°C to 150°C temperature range with 10ns turn-on and 25ns turn-off delay times. Through-hole mounting design.
PackageTO-92-3
Resistance13R
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Microchip VN2450N3-G technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
200mA
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
13R
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
150pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Rds On Max
13R
Resistance
13R
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VN2450N3-G Datasheet
Download the complete datasheet for Microchip VN2450N3-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
