N-channel silicon RF power MOSFET designed for very high frequency applications. This single-element field-effect transistor utilizes Metal-Oxide-Semiconductor technology for efficient power amplification.
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| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
These are design resources that include the Microchip VRF2933
Microchip qualification plan for Liquid Crystal Polymer (LCP) lids on RF Power MOSFETs including VRF141, VRF150, and VRF2933 series to ensure mechanical and thermal reliability.
