The 2PB709AQW,115 is a surface mount NPN bipolar junction transistor with a maximum collector current of 100mA and a maximum power dissipation of 200mW. It has a collector-emitter breakdown voltage of 45V and a collector-base voltage of 45V. The transistor operates over a temperature range of -65°C to 150°C and is packaged in a TO-236-3 case. It is not radiation hardened and is not RoHS compliant.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
NXP 2PB709AQW,115 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 60MHz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
NXP 2PB709AQW,115 Datasheet
Download the complete datasheet for NXP 2PB709AQW,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.