RF LDMOS wideband integrated power amplifier uses an asymmetrical Doherty architecture with on-chip matching for 2300 to 2690 MHz cellular base-station operation. The multi-stage amplifier is rated for 20 to 32 V operation and 10.5 W average output power at a nominal 28 V supply. It provides typical single-carrier W-CDMA power gain around 26.1 dB and 40.4% power-added efficiency at 2590 MHz. Plastic TO-270WB-17 and TO-270WBG-17 package options support high-power RF operation with integrated quiescent-current temperature compensation.
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| Frequency Range | 2300 to 2690MHz |
| Average Output Power | 10.5W |
| Nominal Supply Voltage | 28V |
| Operating Voltage Range | 20 to 32V |
| Amplifier Architecture | Asymmetrical Doherty |
| Input Matching | 50, DC blockedohm |
| Typical Power Gain at 2590 MHz | 26.1dB |
| Typical Power Added Efficiency at 2590 MHz | 40.4% |
| Typical ACPR at 2590 MHz | -31.6dBc |
| Pout at 3 dB Compression at 2590 MHz | 48.2W |
| Typical Pout at 1 dB Compression | 52W |
| Drain-Source Voltage Rating | -0.5 to +65Vdc |
| Gate-Source Voltage Rating | -0.5 to +10Vdc |
| Case Operating Temperature Range | -40 to +150°C |
| Operating Junction Temperature Range | -40 to +225°C |
| Input Power Rating | 22dBm |
| Moisture Sensitivity Level | MSL 3 at 260 °C |
| Load Mismatch Ruggedness | 10:1 VSWR at 32 Vdc, 55 W CW output power |
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