RF MOSFET N-Channel transistor, 40V drain-source breakdown voltage, 31W output power, and 17.2dB gain at 870MHz. Features a TO-270-2 package with tin, matte contact plating, suitable for surface mount applications. Operates from -40°C to 225°C, is halogen-free, lead-free, and RoHS compliant. Packaged in tape and reel for 500 units.
Frequency870MHz
PackageTO-270-2
Voltage Rating40V
MountingSurface Mount
Quick Jump:
Technical Specifications
NXP AFT09MS031GNR1 technical specifications.
General
| Package/Case | TO-270-2 |
| Contact Plating | Tin, Matte |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 870MHz |
| Gain | 17.2dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 31W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Test Voltage | 13.6V |
| Voltage Rating | 40V |
| Weight | 0.01933oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP AFT09MS031GNR1 Datasheet
Download the complete datasheet for NXP AFT09MS031GNR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
