RF MOSFET N-Channel transistor, 40V drain-source breakdown voltage, 31W output power, and 17.2dB gain at 870MHz. Features a TO-270-2 package with tin, matte contact plating, suitable for surface mount applications. Operates from -40°C to 225°C, is halogen-free, lead-free, and RoHS compliant. Packaged in tape and reel for 500 units.
Frequency870MHz
PackageTO-270-2
Voltage Rating40V
MountingSurface Mount
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Technical Specifications
NXP AFT09MS031GNR1 technical specifications.
General
Package/Case
TO-270-2
Contact Plating
Tin, Matte
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
870MHz
Gain
17.2dB
Gate to Source Voltage (Vgs)
12V
Halogen Free
Halogen Free
Lead Free
Lead Free
Max Operating Temperature
225°C
Min Operating Temperature
-40°C
Mount
Surface Mount
Number of Elements
1
Output Power
31W
Package Quantity
500
Packaging
Tape and Reel
RoHS Compliant
Yes
Test Voltage
13.6V
Voltage Rating
40V
Weight
0.01933oz
Compliance
RoHS
Compliant
Datasheet
NXP AFT09MS031GNR1 Datasheet
Download the complete datasheet for NXP AFT09MS031GNR1 to view detailed technical specifications.
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