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Technical Specifications
NXP BAP65-02,115 technical specifications.
General
| Contact Plating | Tin |
| Diode Capacitance-Max | 0.9pF |
| Diode Type | PIN - Single |
| Forward Current | 100mA |
| Height | 0.65mm |
| Lead Free | Lead Free |
| Length | 1.25mm |
| Max Current Rating | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 715mW |
| Max Reverse Current | 20nA |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 715mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Voltage | 30V |
| Reverse Voltage (DC) | 30V |
| RoHS Compliant | Yes |
| Width | 0.85mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BAP65-02,115 Datasheet
Download the complete datasheet for NXP BAP65-02,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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