Automotive-grade RF PIN Attenuator diode, featuring a double dual series configuration. This surface-mount component operates with a maximum reverse voltage of 50V and a maximum forward current of 100mA. It offers a maximum forward voltage of 1.1V at 50mA and exhibits a maximum series resistance of 1.9 Ohms at 100mA, down to 100 Ohms at 0.5mA. The diode capacitance is a maximum of 0.25pF at 20V, with a typical carrier lifetime of 1.25 us. Housed in a 6-pin TSSOP package with gull-wing leads, it measures 2.2mm x 1.35mm x 1mm, with a 0.65mm pin pitch, and supports a maximum power dissipation of 300mW across an operating temperature range of -65°C to 150°C.
PackageTSSOP
MountingSurface Mount
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Technical Specifications
NXP BAP70AM/A2,135 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
TSSOP
Package Description
Thin Shrink Small Outline Package
Lead Shape
Gull-wing
Pin Count
6
PCB
6
Package Length (mm)
2.2(Max)
Package Width (mm)
1.35(Max)
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Type
Attenuator
Configuration
Double Dual Series
Maximum Reverse Voltage
50V
Maximum Forward Current
100mA
Maximum Forward Voltage
1.1@50mAV
Maximum Series Resistance @ Maximum IF
1.9@100mAOhm
Maximum Series Resistance @ Minimum IF
Maximum Diode Capacitance
0.25@20VpF
Typical Carrier Life Time
1.25us
Maximum Power Dissipation
300mW
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
H1R01
EU RoHS
Yes
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BAP70AM/A2,135 Datasheet
Download the complete datasheet for NXP BAP70AM/A2,135 to view detailed technical specifications.
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