The BAS32LT/R is a general purpose rectifier diode with a maximum operating temperature of 200 degrees Celsius. It features a silicon diode element material and a rectifier diode type. The device has a maximum reverse voltage of 100V and a maximum power dissipation of 0.5W. It is available in a 2-pin SOD-123 package type.
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Technical Specifications
NXP BAS32LT/R technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Power Dissipation-Max | 0.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP BAS32LT/R Datasheet
Download the complete datasheet for NXP BAS32LT/R to view detailed technical specifications.
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