Dual-element silicon rectifier diode with a maximum repetitive peak reverse voltage of 30V and a maximum forward current of 0.2A. Features a maximum power dissipation of 0.23W and operates across a temperature range of -55°C to 150°C. Housed in a 3-terminal TO-236AB plastic package.
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Technical Specifications
NXP BAT54S technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
TO-236AB
Pin Count
3
Number of Elements
2
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
30
Power Dissipation-Max
0.23
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.10.00.70
REACH
Compliant
Military Spec
False
Datasheet
NXP BAT54S Datasheet
Download the complete datasheet for NXP BAT54S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.