Dual-element silicon rectifier diode with a maximum repetitive peak reverse voltage of 30V and a maximum forward current of 0.2A. Features a maximum power dissipation of 0.23W and operates across a temperature range of -55°C to 150°C. Housed in a 3-terminal TO-236AB plastic package.
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Technical Specifications
NXP BAT54S technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Power Dissipation-Max | 0.23 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP BAT54S Datasheet
Download the complete datasheet for NXP BAT54S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.