High-speed switching rectifier diode, featuring a TO-236AB package with 3 terminals. This dual-element silicon diode offers a maximum repetitive peak reverse voltage of 100V and a maximum power dissipation of 0.25W. Designed for efficient operation, it supports a maximum operating temperature of 150°C.
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Technical Specifications
NXP BAV70,215 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Power Dissipation-Max | 0.25 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP BAV70,215 Datasheet
Download the complete datasheet for NXP BAV70,215 to view detailed technical specifications.
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