The BAV99T/R is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius. It has a maximum reverse voltage of 100V and a maximum power dissipation of 0.25W. The diode is packaged in a TO-236AB plastic package with 3 pins. It is a dual-element device with a terminal position of dual.
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NXP BAV99T/R technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Power Dissipation-Max | 0.25 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | unknown |
| Military Spec | False |
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