The NPN BJT transistor is a small outline package with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a collector base voltage of 50V, a collector emitter breakdown voltage of 45V, and a collector emitter saturation voltage of 700mV. The transistor has a gain bandwidth product of 100MHz and a transition frequency of 100MHz. It is RoHS compliant and Reach SVHC compliant. The package type is SMALL OUTLINE, R-PDSO-G3 and it is a surface mount device.
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| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Current | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| hFE Min | 100 |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| Voltage | 45V |
| RoHS | Compliant |
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