The BC817-16 is a NPN bipolar junction transistor with a collector base voltage rating of 50V and a collector emitter saturation voltage of 700mV. It has a gain bandwidth product of 100MHz and is RoHS compliant. The transistor is lead free but contains lead, and it is suitable for use in applications up to 45V with a maximum power dissipation of 250mW. It is available in a package with a height of 1.1mm.
Voltage45V
PolarityNPN
Power250mW
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Technical Specifications
NXP BC817-16 technical specifications.
General
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 700mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| Lead Free | Contains Lead |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Voltage | 45V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC817-16 Datasheet
Download the complete datasheet for NXP BC817-16 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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