The BC817-16 is a NPN bipolar junction transistor with a collector base voltage rating of 50V and a collector emitter saturation voltage of 700mV. It has a gain bandwidth product of 100MHz and is RoHS compliant. The transistor is lead free but contains lead, and it is suitable for use in applications up to 45V with a maximum power dissipation of 250mW. It is available in a package with a height of 1.1mm.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP BC817-16 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 700mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| Lead Free | Contains Lead |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Voltage | 45V |
| RoHS | Compliant |
Download the complete datasheet for NXP BC817-16 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
