The NPN BJT has a collector base voltage of 50V and a collector emitter saturation voltage of 700mV. It has a gain bandwidth product of 100MHz and a power dissipation of 250mW. The transistor is RoHS compliant and has a height of 1.1mm. It is suitable for use in applications where a voltage of up to 45V is required.
Voltage45V
PolarityNPN
Power250mW
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Technical Specifications
NXP BC817-25 technical specifications.
General
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 700mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Voltage | 45V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC817-25 Datasheet
Download the complete datasheet for NXP BC817-25 to view detailed technical specifications.
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