NPN bipolar junction transistor (BJT) for surface mount applications. Features a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA. Operates with a transition frequency of 100MHz and a maximum power dissipation of 150mW. Housed in an SC package with tin contact plating, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency100MHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BC846T,115 technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
400mV
Contact Plating
Tin
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Lead Free
Lead Free
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Compliance
RoHS
Compliant
Datasheet
NXP BC846T,115 Datasheet
Download the complete datasheet for NXP BC846T,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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