NPN bipolar junction transistor (BJT) for surface mount applications. Features a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA. Operates with a transition frequency of 100MHz and a maximum power dissipation of 150mW. Housed in an SC package with tin contact plating, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
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NXP BC846T,115 technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
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