The NPN transistor is a single-element device with a collector-emitter breakdown voltage of 45V and a collector-emitter voltage of 45V. It has a maximum collector current of 100mA and a maximum power dissipation of 200mW. The transistor is packaged in a SOT-323 case and is RoHS compliant. It operates over a temperature range of -65°C to 150°C and has a frequency of 100MHz.
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NXP BC850BW,135 technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
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