The BC856T115 is a PNP transistor with a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and is packaged in a SC package. The transistor operates over a temperature range of -65°C to 150°C and is lead free. It is suitable for use in a variety of applications, including general-purpose switching and amplification.
Sign in to ask questions about the NXP BC856T115 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP BC856T115 technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP BC856T115 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
