The BC857B is a PNP bipolar junction transistor with a collector base voltage rating of 50V and a maximum collector current of 100mA. It features a low collector emitter saturation voltage of 650mV and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-236AB plastic package and is lead free and RoHS compliant.
Frequency100MHz
PackageTO-236AB
Voltage45V
MountingSurface Mount
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Technical Specifications
NXP BC857B technical specifications.
General
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Polarity | PNP |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Voltage | 45V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC857B Datasheet
Download the complete datasheet for NXP BC857B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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