PNP Bipolar Junction Transistor (BJT) in a TO-236-3 surface mount package. Features a maximum collector current of 100mA and a collector-emitter voltage of -30V. Offers a minimum hFE of 220 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 250mW. This RoHS compliant component is supplied on tape and reel.
Sign in to ask questions about the NXP BC859B,215 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP BC859B,215 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 650mV |
| Collector Emitter Voltage (VCEO) | -30V |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BC859B,215 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
