NPN bipolar junction transistor for general-purpose applications. Features a 60V collector-emitter voltage (VCEO) and a continuous collector current of 1A. Operates with a maximum power dissipation of 960mW and a gain bandwidth product of 180MHz. Packaged in a surface-mount SOT-223 (SC-73) case, supplied on tape and reel. RoHS compliant and lead-free.
Frequency180MHz
PackageSOT-223
Current Rating1A
MountingSurface Mount
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Technical Specifications
NXP BCP55T/R technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Saturation Voltage | 5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 60V |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Frequency | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 960mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 960mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCP55T/R Datasheet
Download the complete datasheet for NXP BCP55T/R to view detailed technical specifications.
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