The BCP56-10 is a bipolar junction transistor with a collector emitter breakdown voltage of 80V and a maximum operating temperature of 150°C. It is packaged in a SOT-223 package and is available on cut tape. The transistor is RoHS compliant and has a maximum power dissipation of 1.5W. It is a NPN transistor with a transition frequency of 180MHz.
PackageSOT-223
PolarityNPN
Power1.5W
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Technical Specifications
NXP BCP56-10 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 640mW |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCP56-10 Datasheet
Download the complete datasheet for NXP BCP56-10 to view detailed technical specifications.
No datasheet is available for this part.