BCP56-16

This NPN medium-power transistor is housed in a SOT223 (SC-73) surface-mounted plastic package. It supports up to 80 V collector-emitter voltage and 1 A collector current, with total power dissipation of 650 mW. The -16 gain selection specifies an hFE range of 100 to 250, and the transition frequency is at least 100 MHz. Maximum junction temperature is 150 °C. Typical applications include linear voltage regulators, MOSFET drivers, low-side switches, power management circuits, amplifiers, and battery-driven devices.