The BCW30T/R is a PNP bipolar junction transistor with a maximum collector-emitter voltage of 32V and a continuous collector current of 100mA. It has a maximum power dissipation of 250mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a lead-free SOT-23 package and is RoHS compliant.
PackageSOT-23
Current Rating-100mA
PolarityPNP
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Technical Specifications
NXP BCW30T/R technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Saturation Voltage | -150mV |
| Collector-emitter Voltage-Max | 32V |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 215 |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| DC Rated Voltage | -32V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCW30T/R Datasheet
Download the complete datasheet for NXP BCW30T/R to view detailed technical specifications.
No datasheet is available for this part.