NPN bipolar junction transistor (BJT) for general-purpose applications. Features a TO-236-3 package for surface mounting. Offers a maximum collector current of 100mA and a collector-emitter breakdown voltage of 32V. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 250mW. Includes a transition frequency of 250MHz and is RoHS compliant.
PackageTO-236-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BCW60B,215 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 550mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Forward Current | 100mA |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 100mA |
| Max Forward Surge Current (Ifsm) | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Max Repetitive Reverse Voltage (Vrrm) | 40V |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCW60B,215 Datasheet
Download the complete datasheet for NXP BCW60B,215 to view detailed technical specifications.
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