The BCW70 is a PNP transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and is packaged in the TO-236AB surface mount package. The transistor has a maximum operating temperature range of -65°C to 150°C and is RoHS compliant. It is suitable for use in a variety of applications, including general-purpose switching and amplification.
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NXP BCW70 technical specifications.
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| Length | 3mm |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 1.4mm |
| RoHS | Compliant |
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