The BCX55-16 is a single NPN bipolar junction transistor with a collector base voltage of 60V and a collector emitter saturation voltage of 500mV. It can handle a current of 1A and a power dissipation of 1W. The transistor is RoHS compliant and has a height of 1.6mm. It is suitable for use in a variety of applications where a high current and voltage are required.
Voltage60V
Current1A
PolarityNPN
Power1W
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Technical Specifications
NXP BCX55-16 technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Current | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.6mm |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCX55-16 Datasheet
Download the complete datasheet for NXP BCX55-16 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.