
N-channel MOSFET, surface mount, SOT343R package. Features 10V drain-source breakdown voltage, 30mA continuous drain current, and 200mW power dissipation. Operates at frequencies up to 400MHz with a noise figure of 0.9dB and power gain of 34.5dB. Contact plating is Tin, Matte, with lead-free and RoHS compliant construction. Dimensions: 2.2mm length, 1.35mm width, 1mm height.
NXP BF1202WR,115 technical specifications.
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 10V |
| DS Breakdown Voltage-Min | 10V |
| Frequency | 400MHz |
| Gain | 30.5dB |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Input Capacitance | 1pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 0.9dB |
| Number of Elements | 1 |
| Output Power | 200mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Power Gain | 34.5dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 5V |
| Voltage Rating | 10V |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BF1202WR,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
