N-channel MOSFET, surface mount, SOT343R package. Features 10V drain-source breakdown voltage, 30mA continuous drain current, and 200mW power dissipation. Operates at frequencies up to 400MHz with a noise figure of 0.9dB and power gain of 34.5dB. Contact plating is Tin, Matte, with lead-free and RoHS compliant construction. Dimensions: 2.2mm length, 1.35mm width, 1mm height.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP BF1202WR,115 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP BF1202WR,115 technical specifications.
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Voltage (Vdss) | 10V |
| DS Breakdown Voltage-Min | 10V |
| Frequency | 400MHz |
| Gain | 30.5dB |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Input Capacitance | 1pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 0.9dB |
| Number of Elements | 1 |
| Output Power | 200mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Power Gain | 34.5dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 5V |
| Voltage Rating | 10V |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BF1202WR,115 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
