
N-channel RF MOSFET transistor, dual enhancement mode, with a maximum drain-source voltage of 6V and continuous drain current of 0.03A. Features a compact CMPAK surface-mount package with 4 pins (3+Tab), measuring 2.2mm x 1.35mm x 1mm. Offers a typical power gain of 34dB and operates across a temperature range of -65°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP BF1211WR,135 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | CMPAK |
| Package/Case | CMPAK |
| Package Description | Compact Mini Package |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 2.2(Max) |
| Package Width (mm) | 1.35(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 6V |
| Maximum Continuous Drain Current | 0.03A |
| Maximum Power Dissipation | 180mW |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Typical Power Gain | 34dB |
| Typical Input Capacitance @ Vds | 2.1@5V@Gate 1|1.1@5V@Gate 2pF |
| Cage Code | H1R01 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for NXP BF1211WR,135 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.