N-channel RF MOSFET transistor, dual configuration, enhancement mode. Features 6V maximum drain-source voltage and 0.03A maximum continuous drain current. Housed in a compact CMPAK surface-mount package with 4 pins (3+tab), measuring 2.2mm L x 1.35mm W x 1mm H. Offers 180mW maximum power dissipation and a typical power gain of 35dB. Operating temperature range from -65°C to 150°C.
PackageCMPAK
MountingSurface Mount
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Technical Specifications
NXP BF1212WR,135 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | CMPAK |
| Package/Case | CMPAK |
| Package Description | Compact Mini Package |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 2.2(Max) |
| Package Width (mm) | 1.35(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 6V |
| Maximum Continuous Drain Current | 0.03A |
| Maximum Power Dissipation | 180mW |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Typical Power Gain | 35dB |
| Typical Input Capacitance @ Vds | 1.7@5V@Gate 1|1.1@5V@Gate 2pF |
Compliance
| Cage Code | H1R01 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
NXP BF1212WR,135 Datasheet
Download the complete datasheet for NXP BF1212WR,135 to view detailed technical specifications.
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