
N-channel dual-gate MOSFET for surface mount applications, featuring a 12V drain-to-source voltage rating and 40mA continuous drain current. Operates up to 1GHz with a 0.6dB noise figure, suitable for high-frequency circuits. Packaged in a compact 2.2mm x 1.35mm x 1mm CMPAK-4 package, it offers a wide operating temperature range from -65°C to 150°C and is RoHS compliant with tin-matte contact plating.
NXP BF908WR,115 technical specifications.
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 40mA |
| Current Rating | 40mA |
| Drain to Source Voltage (Vdss) | 12V |
| DS Breakdown Voltage-Min | 8V |
| Frequency | 200MHz |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 1.8pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Noise Figure | 0.6dB |
| Number of Elements | 1 |
| Output Power | 300mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 8V |
| Voltage Rating | 12V |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for NXP BF908WR,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
