Dual-gate N-channel MOSFET for surface mount applications, featuring a 20V drain-source breakdown voltage and 6V gate-source voltage. This component operates up to 100MHz with a 29dB power gain and a low 0.7dB noise figure. It offers a continuous drain current of 20mA and a maximum power dissipation of 200mW, packaged in a compact SOT143B (TO-253-4) with tin-matte plating. Designed for lead-free and RoHS compliant environments, with operating temperatures from -65°C to 150°C.
Frequency100MHz
PackageTO-253-4
Voltage Rating20V
Current Rating20mA
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Technical Specifications
NXP BF991,215 technical specifications.
General
| Package/Case | TO-253-4 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 20mA |
| Current Rating | 20mA |
| DS Breakdown Voltage-Min | 6V |
| Frequency | 100MHz |
| Gain | 29dB |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Input Capacitance | 1pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 0.7dB |
| Number of Elements | 1 |
| Output Power | 200mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 200mW |
| Power Gain | 29dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 10V |
| Voltage Rating | 20V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF991,215 Datasheet
Download the complete datasheet for NXP BF991,215 to view detailed technical specifications.
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