NPN RF Bipolar Junction Transistor for surface mount applications. Features a 5V maximum collector-emitter voltage and 65mA maximum DC collector current. This single-element transistor offers a minimum DC current gain of 50 at 0.5mA/1V and a typical transition frequency of 5000MHz. Housed in a 4-pin SOT-143B plastic package with gull-wing leads, it supports a maximum power dissipation of 32mW and operates within a temperature range of -65°C to 175°C.
PackageSOT-143B
MountingSurface Mount
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Technical Specifications
NXP BFG25A/X,215 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
SOT-143B
Package Description
Small-Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
3(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.7|1.9
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
5V
Maximum Collector Base Voltage
8V
Maximum Emitter Base Voltage
2V
Maximum DC Collector Current
0.0065A
Maximum Power Dissipation
32mW
Minimum DC Current Gain
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
5000(Typ)MHz
Maximum Noise Figure
2(Typ)dB
Min Operating Temperature
-65°C
Max Operating Temperature
175°C
Operational Bias Conditions
1V/0.5mA
Typical Power Gain
18dB
Compliance
Cage Code
H1R01
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BFG25A/X,215 Datasheet
Download the complete datasheet for NXP BFG25A/X,215 to view detailed technical specifications.
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