
NPN RF Bipolar Junction Transistor for surface mount applications. Features a 5V maximum collector-emitter voltage and 65mA maximum DC collector current. This single-element transistor offers a minimum DC current gain of 50 at 0.5mA/1V and a typical transition frequency of 5000MHz. Housed in a 4-pin SOT-143B plastic package with gull-wing leads, it supports a maximum power dissipation of 32mW and operates within a temperature range of -65°C to 175°C.
NXP BFG25A/X,215 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package/Case | SOT-143B |
| Package Description | Small-Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 1.7|1.9 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 5V |
| Maximum Collector Base Voltage | 8V |
| Maximum Emitter Base Voltage | 2V |
| Maximum DC Collector Current | 0.0065A |
| Maximum Power Dissipation | 32mW |
| Minimum DC Current Gain | [email protected]@1V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 5000(Typ)MHz |
| Maximum Noise Figure | 2(Typ)dB |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 175°C |
| Operational Bias Conditions | 1V/0.5mA |
| Typical Power Gain | 18dB |
| Cage Code | H1R01 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for NXP BFG25A/X,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.