
RF Transistor, NPN Silicon, single dual collector configuration, designed for surface mount applications. Features a 6V maximum collector-emitter voltage and 0.01A maximum DC collector current, with 60mW maximum power dissipation. Operates within a -65°C to 175°C temperature range, offering a minimum DC current gain of 60 at 5mA/3V. Achieves a typical transition frequency of 14000MHz and a typical noise figure of 1dB. Packaged in a SOT-143R with gull-wing leads.
NXP BFG310/XR,215 technical specifications.
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